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Heatspreader Materials

Pure metal

Pure Mo

純Mo

These have low thermal expansion close to Si chips, and superior mechanical properties. These are most suitable for high-power / high-reliability heatspreader.
Various machining processes including stamping can be done on these materials.

Application For diode and thyristor, Power transistor substrate, LED substrate, etc.

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Material Trade Name Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 800℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Mo Mo Mo Thermal expansion is close to semiconductor (Si, GaN, SiC), widely used to reduce thermal stress on semiconductor. 5.7 142

Alloy (Cu-W, Cu-Mo)

Cu-W

Cu-W

Cu-W is a combination of W which has low thermal expansion, and Cu which has high thermal conductivity. Thermal expansion can be adjusted to those of Alumina and Kovar materials.
Also, with good machinability, it’s possible to manufacture the parts with small-complicated shapes.
We offer 6 types of CuW (W-6, W-10, W-15, W-20, W-10N, W-10T) according to customer needs.

Application Opto electronics, wireless communication, LED substrate.

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Material Trade Name Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 800℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Cu-W W-6 94W-6Cu CuW with its thermal expansion coefficient kept low, having close thermal expansion coefficient to GaAs and GaN, and preventing thermal expansion mismatch. 6.4 141
W-10 89W-11Cu The same thermal expansion coefficient as that of aluminum ceramic, widely used for ceramics package using alumina. 7.9 174
W-15 85W-15Cu The same thermal expansion coefficient as that of beryllia ceramics, widely used for ceramics package using beryllia. It is also widely used for packages using both alumina and kovar because its thermal expansion coefficient is an intermediate value between those of alumina and kovar. 8.6 184
W-20 80W-20Cu Has the same thermal expansion coefficient as that of Kovar, widely used for metal package using Kovar. 9.8 200
W-10N 89W-11Cu Has the same thermal expansion coefficient as that of alumina ceramic, widely used for ceramic package using alumina. If you can prepare specialized molds for W-10N, we can offer outer circumference machining-less CuW (near net CuW), which is cost-effective during mass production. 7.9 200
W-10T 94W-11Cu Although it has the same thermal expansion coefficient as that of W - 10, the thermal conductivity is improved by a special manufacturing method; moreover, it is widely used for sub-mount applications for high power lasers because it can keep warp small. 7.9 205

Cu-Mo

Cu-Mo

Cu-Mo is suitable for rolling and stamping processes. Thermal expansion and thermal conductivity are adjustable with this material. In addition, it has excellent initial heat radiation effect on the surface because the surface of the laminated material CPC is pure Cu.
We offer 10 types of CuMo (CM-15, PCM30, PCM35, PCM40, RCM60, CPC141, CPC232, CPC111, CPC212, CPC-300) according to customer needs.

Application Wireless communication, Opto electronics, in-vehicle, wind power generation, LED, industrial machine

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Material Trade Name Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 800℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Cu-Mo CM-15 85Mo-15Cu CuMo with its thermal expansion coefficient kept low, having thermal expansion coefficient close to those of GaAs and GaN, and preventing thermal expansion mismatch. 7.6 148
PCM30 70Mo-30Cu CuMo keeping thermal expansion low, but it can be applied to cost-effective manufacturing methods such as rolling and stamping. 7.5 195
PCM35 65Mo-35Cu Has the same thermal expansion coefficient as that of alumina ceramic, widely used for ceramic package using alumina. 7.8 210
PCM40 60Mo-40Cu As its thermal expansion coefficient is an intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material when devices are mounted on a copper plate or aluminum plate. 8.2 220
RCM60 40Mo-60Cu As its thermal expansion coefficient is an intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material when devices are mounted on a copper plate or aluminum plate. 10.5 275
CPC141 Cu/PCM/Cu Has the same thermal expansion coefficient as that of alumina ceramic, widely used for ceramic package using alumina. As the surface is copper with high thermal conductivity, it has excellent heat diffusion. 7.6 200
CPC232 Cu/PCM/Cu A material selected because of ideal values in terms of high thermal conductivity and low thermal expansion coefficient. 8.4 235
CPC111 Cu/PCM/Cu A material selected because of ideal values in terms of high thermal conductivity and low thermal expansion coefficient. 9.8 260
CPC212 Cu/PCM/Cu Although it has the same thermal expansion coefficient as that of W - 10, the thermal conductivity is improved by a special manufacturing method; moreover, it is widely used for sub-mount applications for high power lasers because it can keep warp small. 12.1 300
CPC-300 Cu/PCM/Cu Although it has the same thermal expansion coefficient as that of W - 10, the thermal conductivity is improved by a special manufacturing method; moreover, it is widely used for sub-mount applications for high power lasers because it can keep warp small. 12.1 300

Ceramics

AIN

AlN

AIN is a material with high electric insulation and low dielectric constant, making it possible to form various metallized thin films on the surface, for electric circuits, chip mounting, and wire bonding.

Application Semiconductor laser submount, LED substrate, etc.

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Material Trade Name/Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 400℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
AlN AlN(200W) Useful when insulation and patterns are required 4.5 >200
AlN(170W) 4.5 >170

Sintered Al-SiC

焼結Al-SiC

Sintered Al-SiC is a heatspreader easily applied for relatively complex shaped parts production such as “lid shape”. Specific gravity is 1/3 of Cu. By adjusting the composite ratio of Al and SiC, it is possible to customize the thermal expansion to required specification.
With its young's modulus as small as 1/2 of iron, it can also be used as stress relaxation material. The surface has excellent adhesion of adhesives.

Application ECU for control, MPU, DSP, System LSI, Router LSI, etc

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Material Type Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 400℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Al-SiC β8 70SiC-30Al Without requiring processing thanks to a special mold, it can be manufactured cost-effectively. The thermal expansion coefficient is variable according to the package type. 8 140
β9 65SiC-35Al 9 130
β14 45SiC-55Al 14 160

Mg-SiC

MgSiC

Standard materials are light weight and have a low coefficient of thermal expansion of 7.0 ppm and high thermal conductivity of 230 W/(m・K). The composition ratio of Mg and SiC may be varied to offer customized thermal expansion. There is little variation in warping and the warp shape can be maintained stably after heat-cycle testing.

Application Power module for electric railway, industrial machinery and automotive (HEV).

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Material Trade Name Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 120℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Mg-SiC Mg-SiC 18Mg-SiC Being lightweight, it is suitable for use on large boards; in addition, it has stable warp, excellent high thermal conductivity and heat radiation. 7.0 230

Diamond

Sumicrystal

スミクリスタル

Sumicrystal is a synthetic diamond single crystal with the highest thermal conductivity among the world's materials. It allows the forming of various metallized thin films for chip mounting and wire bonding.

Application Semiconductor laser submount, etc.
 

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Material Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 100℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
Sumicrystal A heatspreader of diamond having the highest thermal conductivity among substances. 2.3 2000

CVD diamond

CVDダイヤモンド

CVD diamond is polycrystalline diamond without binder, obtained by the Chemical Vapor Deposition (CVD) method. It allows the forming of various metallized thin films for chip mount and wire bonding.

Application Semiconductor laser submount, power transistor substrate,etc.
 

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Material Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 100℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
CVD-Diamond A heatspreader of diamond of 0.1 to 0.4 mm produced by the CVD (Chemical Vapor Deposition) method. 2.3 >1000

DMCH(Cu-Diamond)

DMCH

DMCH is a composite material of diamond and Cu. Although it has thermal expansion coefficient close to that of GaAs-or GaN-compound semiconductor material, it has thermal conductivity higher than that of Cu. It allows the forming of various metallized thin films for chip mounting and wire bonding.

Application Semiconductor laser submount, power transistor substrate, etc.

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Material Type Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 400℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
DMCH  Diamond-Metal DC60 Cu-Diamond A heatspreader of high thermal conductivity having a coefficient of thermal expansion suitable for compound semiconductors (GaAs, GaN). 6.0 550
DC70 6.5 500

DMCH(Ag-Diamond)

Ag-Diamond

Composite material of Silver and Diamond, the thermal conductivity is ≧600W/mK and higher than Copper Diamond.
The Ag-Diamond is applicable to large size purpose, like as 50×50mm2.

Application Wireless communication, Ceramics package, Power transistor substrate, MPU, etc.

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Material Type Composition Characteristics Coefficient of Average Linear Thermal Expansion
R.T. to 800℃
[ppm/K]
Thermal conductivity
 R.T.[W/(m・K)]
DMCH  Diamond-Metal AC90 Ag-Diamond The thermal conductivity is ≧600W/mK and higher than Cu-Diamond.
It is applicable to large size purpose, like as 50×50mm2.
10.5 600