The materials have low thermal expansion close to Silicon (Si) chips, and superior mechanical properties.
These heatspreaders are most suitable for devices that need high-power and high-reliability.
Various machining processes including stamping is available on these materials.
Applications | Diode, Thyristor, Power transistor substrate, LED substrate, etc. |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~800℃ [ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
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Mo | Mo | Mo | The thermal expansion is close to semiconductor (Si, GaN, SiC). It is widely used to reduce thermal stress on semiconductors. | 5.7 | 142 |
Cu-W is a combination of Tungsten (W) which has low thermal expansion, and Copper (Cu) which has high thermal conductivity.
The thermal expansion can be adjusted to surrounding materials such as Alumina and Kovar.
Also, with its good machinability, it’s possible to manufacture the parts with small-complex shaped.
We offer 6 types of Cu-W (W-6, W-10, W-15, W-20, W-10N, W-10T) according to customer needs.
Applications | Opto electronics, Wireless communication, LED substrate, etc. |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~800℃ [ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
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Cu-W | W-6 | 94W-6Cu | This Cu-W with a low coefficient of thermal expansion has the close coefficient to GaAs and GaN. And, it prevents mismatches of the thermal expansion. | 6.4 | 141 |
W-10 | 89W-11Cu | The coefficient of thermal expansion matches alumina. So, it is widely used in ceramic packages using alumina. | 7.9 | 174 | |
W-15 | 85W-15Cu | The same thermal expansion coefficient as that of beryllia ceramics, widely used for ceramics package using beryllia. It is also widely used for packages using both alumina and kovar because its thermal expansion coefficient is an intermediate value between those of alumina and kovar. | 8.6 | 184 | |
W-20 | 80W-20Cu | It matches the coefficient of thermal expansion of Kovar and is widely used in metal packages using Kovar. | 9.8 | 200 | |
W-10N | 89W-11Cu | The coefficient of thermal expansion matches alumina. It is widely used in ceramic packages using alumina.W-10N can provide Cu-W (near-net Cu-W) without periphery process by manufacturing a dedicated mold. | 7.9 | 200 | |
W-10T | 89W-11Cu | Although it has the same thermal expansion coefficient as that of W - 10, the thermal conductivity is improved by a special manufacturing method; moreover, it is widely used for sub-mount applications for high power lasers because it can keep warp small. | 7.9 | 205 |
Cu-Mo is available with rolling and stamping processes.
The thermal expansion and thermal conductivity are adjustable.
In addition, it has excellent initial heat dissipation effect on the surface because the surface, the laminated material CPC, is pure Copper.
We offer 10 types of Cu-Mo (CM-15, PCM30, PCM35, PCM40, RCM60, CPC141, CPC232, CPC111, CPC212, CPC-300) according to customer needs.
Applications | Wireless communication, Opto electronics, in-vehicle, Wind power generation, LED, Industrial machine, etc. |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~800℃ [ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
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Cu-Mo | CM-15 | 85Mo-15Cu | This Cu-Mo has a low coefficient of thermal expansion, and has the close coefficient to GaAs and GaN. And, it prevents mismatches in thermal expansion. | 7.6 | 148 |
PCM30 | 70Mo-30Cu | This material keeps thermal expansion low, and can be manufactured by cost-effective manufacturing processes such as rolling and stamping. | 7.5 | 195 | |
PCM35 | 65Mo-35Cu | This has the same coefficient of thermal expansion as that of alumina, widely used for ceramic package using alumina. | 7.8 | 210 | |
PCM40 | 60Mo-40Cu | As its thermal expansion coefficient is intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material in case devices are mounted on a copper or aluminum plate. | 8.2 | 220 | |
RCM60 | 40Mo-60Cu | As its thermal expansion coefficient is intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material when devices are mounted on a copper or aluminum plate. | 10.5 | 275 |
CPC (copper, copper-molybdenum, copper) is a composite material with a laminated structure with copper-molybdenum (Cu-Mo) sandwitched between copper layers. Thermal conductivity and coefficient of thermal expansion can be adjusted by changing composition and lamination ratio of Cu-Mo.
In addition, as both surfaces are copper, it is excellent in initial heat dissipation.
Applications | Wireless communication, Automotive, etc. |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~800℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
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CPC™ | CPC141 | Cu/Cu-Mo/Cu | Has the same thermal expansion coefficient as that of alumina ceramic, widely used for ceramic package using alumina. As the surface is copper with high thermal conductivity, it has excellent heat diffusion. | 7.6 | 200 |
CPC232 | Laminated in "Cu:Cu-Mo:Cu=2:3:2(thickness)" to adjust the coefficient of thermal expansion and thermal conductivity. | 8.4 | 235 | ||
CPC111 | Laminated in "Cu:Cu-Mo: Cu=1:1:1 (thickness)" to adjust the coefficient of thermal expansion and thermal conductivity. | 9.8 | 260 | ||
CPC212 | Laminated in "Cu:Cu-Mo: Cu=2:1:2 (thickness)" to improve the thermal conductivity to 300W/ (m・K).It is widely used to realize the performance of high-power devices (GaN, SiC). | 12.1 | 300 | ||
CPC-300 | It has a very high thermal conductivity, 300W/ (m・K), and is widely used to realize the high performance of high-power devices (GaN, SiC).The thin plates, 0.5mm, are also available. | 12.1 | 300 |
AlN is a material with high electric insulation and low dielectric constant.
On the surface, it is possible to form various metallizing thin films for electric circuits, chip mounting, and wire bonding.
Applications | Semiconductor laser submount, LED substrate, etc. |
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Material | Trade Name / Composition |
Features | Coefficient of Average Linear Thermal Expansion R.T.~400℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|---|
AlN | AlN(200W) | It is useful when insulation and patterns are required. | 4.5 | >200 |
AlN(170W) | 4.5 | >170 |
Sintered Al-SiC is a heatspreader which can be processed in relatively complex shape such as “lid shape”.
The specific gravity is 1/3 of Copper (Cu).
By adjusting the composite ratio of Aluminum (Al) and Silicon Carbide (SiC), it is possible to customize the thermal expansion to required specification.
With its young's modulus as small as 1/2 of iron, it can also be used as stress relaxation material. And, the surface has excellent adhesion of adhesive bonds.
Applications | ECU for control, MPU, DSP, System LSI, Router LSI, etc |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~120℃ [ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|---|---|
Al-SiC | β8 | 70SiC-30Al | By using a special mold, it can be manufactured cost-effectively without processing. The thermal expansion coefficient is variable according to the package type. | 8.0 | 140 |
β9 | 65SiC-35Al | 9.0 | 130 | ||
β14 | 45SiC-55Al | 14.0 | 160 |
Standard materials are light-weighted and have a low coefficient of thermal expansion, 7.0 ppm, and high thermal conductivity, 230 W/(m・K).
There is little variation in warping and the warp shape can be maintained stably after heat-cycle testing.
Applications | Power module for electric railway, industrial machinery and automotive (HEV). |
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Material | Trade Name | Composition | Features | Coefficient of Average Linear Thermal Expansion R.T.~120℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
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Mg-SiC | MAGSICTM | 18Mg-SiC | Since it is lightweighted, it is suitable to be used in larger size; in addition, it has stable warpage, excellent high thermal conductivity and heat dissipation. | 7.0 | 230 |
SUMICRYSTAL is a synthetic diamond single crystal with the highest thermal conductivity among all materials.
It is possible to form various metallizing thin films for chip mounting and wire bonding.
Applications | Semiconductor laser submount, etc. |
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Material | Features | Coefficient of Average Linear Thermal Expansion R.T.~100℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|
SUMICRYSTALTM | A heatspreader of diamond having the highest thermal conductivity among substances. | 2.3 | 2000 |
SUMICRYSTAL is a trademark of Sumitomo Electric Industries, Ltd.
CVD diamond is singlecrystalline diamond without binder, obtained by the Chemical Vapor Deposition method (CVD). It allows the forming of various metallized thin films for chip mount and wire bonding.
Applications | Semiconductor laser submount, Power transistor substrate, etc. |
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Material | Features | Coefficient of Average Linear Thermal Expansion R.T.~100℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|
CVD-Diamond | This is a diamond heatspreader of 0.2 to 0.4 mm produced by the CVD method (Chemical Vapor Deposition). | 2.3 | >1000 |
DMCH is a composite material of diamond and Copper.
Although it has thermal expansion coefficient close to that of compound semiconductor material (GaAs and GaN), it has thermal conductivity higher than that of Copper. It allows the forming of various metallizing thin films for chip mounting and wire bonding.
Applications | Semiconductor laser submount, power transistor substrate, etc. |
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Material | Trade Name | Features | Coefficient of Average Linear Thermal Expansion R.T.~400℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|---|
Cu-Diamond | DC60 | The heatspreader with high thermal conductivity has coefficient of thermal expansion suitable for compound semiconductors (GaAs, GaN). | 6.0 | 550 |
DC70 | 6.5 | 500 |
This is a composite material of Silver and Diamond, the thermal conductivity is 600W/(m・K) and higher than Cu-Diamond.
It is applicable to large size purpose as 50×50mm.
Applications | Wireless communication, Ceramics package, Power transistor substrate, MPU, etc. |
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Material | Trade Name | Features | Coefficient of Average Linear Thermal Expansion R.T.~800℃[ppm/K] |
Thermal conductivity R.T.[W/(m・K)] |
---|---|---|---|---|
Ag-Diamond | AD90 | The thermal conductivity is 600W/(m・K) and higher than Cu-Diamond. It is applicable to large size purpose as 50×50mm. |
10.5 | 600 |