A.L.M.T. Corp.

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Heatspreader applications

High output devices for wireless communication

Plastic package

プラスチックパッケージ

Cu-Mo is widely used.

  • CPC212、CPC-300
  • These have a thermal conductivity as high as 300 W/(m・K) and are employed widely to ensure the performance of high-power devices (GaN).
  • CPC141
  • Used for applications where the thermal expansion needs to be matched with semiconductor elements (Si, GaN).

Ceramic packages

セラミックパッケージ

W-10, W-10N and PCM35 having a coefficient of thermal expansion that matches that of alumina ceramic are widely used.

  • W-10
  • Cu-W is highly rigid and used for applications where warping needs to be minimized.
  • W-10N
  • If the customer places an order for exclusive dies, outer dimension milling eliminated Cu-W (near-net Cu-W) that offers cost advantages in mass production is available.
  • PCM35
  • Since Cu-Mo is ductile, cost-competitive rolling and pressing operations can be used.

Circuit boards for metal packages

メタルパッケージ用回路基板

W-20 and PCM40 having a coefficient of thermal expansion that matches that of Kovar are widely used.

  • W-20
  • Cu-W is highly rigid and used for applications where warping needs to be minimized.
  • PCM40
  • Since Cu-Mo is ductile, cost-competitive rolling and pressing operations can be used.

High output device for cars and trains

Base substrate for power module

パワーモジュール用ベース基板

Cu-Mo (PCM35, CPC232) is widely used and Mg-SiC has been developed anew.

  • PCM35
  • Since Cu-Mo is ductile, cost-competitive rolling and pressing operations can be used. By creating warpage in advance, warping of the final shape can be minimized.
  • CPC232
  • Since Cu-Mo is ductile, cost-competitive rolling and pressing operations can be used. Further, the usage amount of Mo can be reduced.
  • Mg-SiC
  • Light weight to make this suitable for large substrates as in this application. Furthermore, the warpage is stable and good thermal conductivity and heat dissipation are available.

Heat buffer plates

熱緩衝板

Mo and Cu-Mo (PCM30, PCM60) that enable manufacture of thin sheets at low cost by rolling are widely used.

  • Mo
  • Thermal expansion close to that of semiconductor elements (Si, GaN, SiC) and therefore widely used to reduce heat stress to semiconductor elements.
  • PCM30
  • Thermal expansion in the middle of semiconductor elements and metals (Cu, Al) to offer superior stress buffer capacity.
  • RCM60
  • High thermal conductivity to enable design that places importance on heat dissipation.

High power devices for optical communication

Sub-mount/carrier

サブマウント・キャリア

AlN is widely used for submounts since it has high electric insulation performance and enables pattern formation.

  • W-10
  • The thermal expansion has been designed to match that of alumina ceramic to make this material usable widely for parts that are joined with alumina.
  • W-20
  • The thermal expansion has been designed to match that of Kovar to make this material usable widely for parts that are joined with Kovar.

LD packages

LDパッケージ

W-20 and PCM40 having a coefficient of thermal expansion that matches that of Kovar are widely used.

  • W-20
  • Cu-W is highly rigid and used for applications where warping needs to be minimized.
  • PCM40
  • Since Cu-Mo is ductile, cost-competitive rolling and pressing operations can be used.

LSI parts

Ceramic package substrate

セラミックパッケージ基板

Cu-W (W-10) is widely used.

  • W-10
  • The thermal expansion has been designed to match that of alumina ceramic and is widely used for ceramic packages that use alumina.

Lid (for ceramics/organic packages)

リッド(セラミックス・オーガニックパッケージ用)

AlSiC is widely used since it enables manufacture at low cost using dedicated molds to eliminate processing.

  • Al-SiC
  • The thermal expansion can be varied according to package types.

LD parts

Bar laser type

バーレーザタイプ

Cu-W (W-10T), Cu-Diamond and AIN that have a high thermal conductivity are widely used.

  • W-10T
  • The thermal expansion is the same as that of W-10, but its thermal conductivity has been improved by a special manufacturing method. Also since it is possible to minimize warpage, this is widely used for high-power laser submount applications.
  • Cu-Diamond
  • Thermal conductivity exceeding that of Cu and very high heat dissipation performance.
  • AlN
  • Used for applications where insulation and patterns are required.

LED parts

Support substrate

LED支持基板

Cu-W (W-6, W-10) and Mo that enable manufacture of large thin wafers are widely used.

  • Mo
  • Thermal expansion close to that of semiconductor elements (Si, GaN, SiC) to make this material widely used to reduce heat stress to semiconductor elements.
  • W-6
  • Cu-W with reduced thermal expansion. The thermal expansion is close to that of GaAs and GaN to prevent mis-matching of thermal expansion.
  • W-10
  • Thermal expansion close to that of alumina of peripheral members to make this material widely used for LED support substrates.