This wheel demonstrates excellence in reducing damaged layers and strain layers during grinding of brittle materials such as reducing polishing of 300-mm silicon wafers and minimizing cracking of thin device wafers.

Continuous grinding of single crystal SiC wafers that are difficult to grind with other wheels is now possible. Grinding can be performed at the same feed rate as for Si wafers and ultra-smooth surfaces can be produced.

Brittle LT wafers used for SAW filters can be ground with low damage and high quality.

The adjustment of the binding grade and bond has enabled grinding of difficult-to-cut materials with fine grains that have been difficult to grind with conventional wheels.