A.L.M.T. Corp.

The materials have low thermal expansion close to Silicon (Si) chips, and exhibit superior mechanical properties. These heat spreaders are most suitable for high-power, high-reliability devices. Various machining processes, including stamping, are available for these materials.

Cu-W comprises Tungsten (W), known for its low thermal expansion, and Copper (Cu), recognized for its high thermal conductivity. Its thermal expansion can be adjusted to match that of surrounding materials such as Alumina and Kovar. Additionally, due to its good machinability, it can be used to manufacture small, complex-shaped parts. We offer six types of Cu-W (W-6, W-10, W-15, W-20, W-10N, W-10T) to cater to customers' individual needs.

Cu-Mo can be processed using rolling and stamping methods. The thermal expansion and conductivity are easily adjustable. Furthermore, it exhibits excellent initial heat dissipation on the surface, as the laminated surface material, known as CPC, is made of pure copper. We offer 10 types of Cu-Mo (CM-15, PCM30, PCM35, PCM40, RCM60, CPC141, CPC232, CPC111, CPC212, CPC-300) to meet the diverse needs of our customers.

CPC is a laminated composite material that sandwiches a copper-molybdenum (Cu-Mo) layer between two copper layers. The thermal conductivity and coefficient of thermal expansion can be adjusted by altering the composition and lamination ratio of the Cu-Mo layer. In addition, because the outer layers of CPC are copper, it excels in initial heat dissipation.

AlN is a material with high electrical insulation and a low dielectric constant. On its surface, it is possible to form various metallized thin films suitable for electric circuits, chip mounting, and wire bonding.

Sintered Al-SiC, a heat spreader, can be processed into relatively complex shapes like a "lid." Its specific gravity is one-third that of Copper (Cu). By adjusting the composite ratio of Aluminum (Al) and Silicon Carbide (SiC), we can tailor the thermal expansion to meet the required specification. With its Young's modulus at half that of iron, it can also serve as a stress-relief material. Furthermore, its surface offers excellent adhesive bonding properties.

Standard materials are lightweight, with a low coefficient of thermal expansion (7.0 ppm) and high thermal conductivity (230 W/(m･K)). There is minimal warping, and the material maintains its shape well after heat-cycle testing.

SUMICRYSTAL is a synthetic diamond single crystal with the highest thermal conductivity of all materials. Various metallized thin films for chip mounting and wire bonding can be formed on it.

CVD diamond is a single-crystalline diamond without a binder, obtained by the Chemical Vapor Deposition method (CVD). Various metallized thin films for chip mounting and wire bonding can be formed on it.

DMCH is a composite material of diamond and copper. Although its thermal expansion coefficient is similar to compound semiconductor materials like GaAs and GaN, DMCH has a higher thermal conductivity than copper. Various metallized thin films for chip mounting and wire bonding can be formed on it.

This is a composite material of Silver and Diamond, which has a thermal conductivity of 600W/(m・K), higher than that of Cu-Diamond. It can be used for large sizes up to 50×50mm.