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Heatspreader Materials

Pure metal

Mo (Molybdenum)

Mo (Molybdenum)

The materials have low thermal expansion close to Silicon (Si) chips, and superior mechanical properties.
These heatspreaders are most suitable for devices that need high-power and high-reliability.
Various machining processes including stamping is available on these materials.

Applications Diode, Thyristor, Power transistor substrate, LED substrate, etc.

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~800℃ [ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Mo Mo Mo The thermal expansion is close to semiconductor (Si, GaN, SiC). It is widely used to reduce thermal stress on semiconductors. 5.7 142

Alloy (Cu-W, Cu-Mo)

Cu-W (Copper-Tungsten)

Cu-W (Copper-Tungsten)

Cu-W is a combination of Tungsten (W) which has low thermal expansion, and Copper (Cu) which has high thermal conductivity.
The thermal expansion can be adjusted to surrounding materials such as Alumina and Kovar.
Also, with its good machinability, it’s possible to manufacture the parts with small-complex shaped.
We offer 6 types of Cu-W (W-6, W-10, W-15, W-20, W-10N, W-10T) according to customer needs.

Applications Opto electronics, Wireless communication, LED substrate, etc.

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~800℃ [ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Cu-W W-6 94W-6Cu This Cu-W with a low coefficient of thermal expansion has the close coefficient to GaAs and GaN. And, it prevents mismatches of the thermal expansion. 6.4 141
W-10 89W-11Cu The coefficient of thermal expansion matches alumina. So, it is widely used in ceramic packages using alumina. 7.9 174
W-15 85W-15Cu The same thermal expansion coefficient as that of beryllia ceramics, widely used for ceramics package using beryllia. It is also widely used for packages using both alumina and kovar because its thermal expansion coefficient is an intermediate value between those of alumina and kovar. 8.6 184
W-20 80W-20Cu It matches the coefficient of thermal expansion of Kovar and is widely used in metal packages using Kovar. 9.8 200
W-10N 89W-11Cu The coefficient of thermal expansion matches alumina. It is widely used in ceramic packages using alumina.W-10N can provide Cu-W (near-net Cu-W) without periphery process by manufacturing a dedicated mold. 7.9 200
W-10T 89W-11Cu Although it has the same thermal expansion coefficient as that of W - 10, the thermal conductivity is improved by a special manufacturing method; moreover, it is widely used for sub-mount applications for high power lasers because it can keep warp small. 7.9 205

Cu-Mo (Copper-Molybdenum)

Cu-Mo (Copper-Molybdenum)

Cu-Mo is available with rolling and stamping processes.
The thermal expansion and thermal conductivity are adjustable.
In addition, it has excellent initial heat dissipation effect on the surface because the surface, the laminated material CPC, is pure Copper.
We offer 10 types of Cu-Mo (CM-15, PCM30, PCM35, PCM40, RCM60, CPC141, CPC232, CPC111, CPC212, CPC-300) according to customer needs.

Applications Wireless communication, Opto electronics, in-vehicle, Wind power generation, LED, Industrial machine, etc.

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~800℃ [ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Cu-Mo CM-15 85Mo-15Cu This Cu-Mo has a low coefficient of thermal expansion, and has the close coefficient to GaAs and GaN. And, it prevents mismatches in thermal expansion. 7.6 148
PCM30 70Mo-30Cu This material keeps thermal expansion low, and can be manufactured by cost-effective manufacturing processes such as rolling and stamping. 7.5 195
PCM35 65Mo-35Cu This has the same coefficient of thermal expansion as that of alumina, widely used for ceramic package using alumina. 7.8 210
PCM40 60Mo-40Cu As its thermal expansion coefficient is intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material in case devices are mounted on a copper or aluminum plate. 8.2 220
RCM60 40Mo-60Cu As its thermal expansion coefficient is intermediate value between the devices (Si, GaAs, GaN, SiC) and copper or aluminum, it is widely used as a stress cushioning material when devices are mounted on a copper or aluminum plate. 10.5 275

CPC (Copper, Copper-Molybdenum, Copper)

CPC (Copper, Copper-Molybdenum, Copper)

CPC (copper, copper-molybdenum, copper) is a composite material with a laminated structure with copper-molybdenum (Cu-Mo) sandwitched between copper layers. Thermal conductivity and coefficient of thermal expansion can be adjusted by changing composition and lamination ratio of Cu-Mo.
In addition, as both surfaces are copper, it is excellent in initial heat dissipation.

Applications Wireless communication, Automotive, etc.

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~800℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
CPC CPC141 Cu/Cu-Mo/Cu Has the same thermal expansion coefficient as that of alumina ceramic, widely used for ceramic package using alumina. As the surface is copper with high thermal conductivity, it has excellent heat diffusion. 7.6 200
CPC232 Laminated in "Cu:Cu-Mo:Cu=2:3:2(thickness)" to adjust the coefficient of thermal expansion and thermal conductivity. 8.4 235
CPC111 Laminated in "Cu:Cu-Mo: Cu=1:1:1 (thickness)" to adjust the coefficient of thermal expansion and thermal conductivity. 9.8 260
CPC212 Laminated in "Cu:Cu-Mo: Cu=2:1:2 (thickness)" to improve the thermal conductivity to 300W/ (m・K).It is widely used to realize the performance of high-power devices (GaN, SiC). 12.1 300
CPC-300 It has a very high thermal conductivity, 300W/ (m・K), and is widely used to realize the high performance of high-power devices (GaN, SiC).The thin plates, 0.5mm, are also available. 12.1 300

Ceramics

AlN (Aluminum Nitride)

AlN (Aluminum Nitride)

AlN is a material with high electric insulation and low dielectric constant.
On the surface, it is possible to form various metallizing thin films for electric circuits, chip mounting, and wire bonding.

Applications Semiconductor laser submount, LED substrate, etc.

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Material Trade Name /
Composition
Features Coefficient of Average Linear Thermal Expansion
R.T.~400℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
AlN AlN(200W) It is useful when insulation and patterns are required. 4.5 >200
AlN(170W) 4.5 >170

Al-SiC (Sintered Aluminum-Silicon Carbide)

焼結Al-SiC

Sintered Al-SiC is a heatspreader which can be processed in relatively complex shape such as “lid shape”.
The specific gravity is 1/3 of Copper (Cu).
By adjusting the composite ratio of Aluminum (Al) and Silicon Carbide (SiC), it is possible to customize the thermal expansion to required specification.
With its young's modulus as small as 1/2 of iron, it can also be used as stress relaxation material. And, the surface has excellent adhesion of adhesive bonds.

Applications ECU for control, MPU, DSP, System LSI, Router LSI, etc

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~120℃ [ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Al-SiC β8 70SiC-30Al By using a special mold, it can be manufactured cost-effectively without processing. The thermal expansion coefficient is variable according to the package type. 8.0 140
β9 65SiC-35Al 9.0 130
β14 45SiC-55Al 14.0 160

Mg-SiC (Magnesium-Silicon Carbide)

MgSiC

Standard materials are light-weighted and have a low coefficient of thermal expansion, 7.0 ppm, and high thermal conductivity, 230 W/(m・K).
The composition ratio of Magnesium (Mg) and Silicon Carbide (SiC) can be adjusted to offer customized thermal expansion.
There is little variation in warping and the warp shape can be maintained stably after heat-cycle testing.

Applications Power module for electric railway, industrial machinery and automotive (HEV).

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Material Trade Name Composition Features Coefficient of Average Linear Thermal Expansion
R.T.~120℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Mg-SiC Mg-SiC 18Mg-SiC Since it is lightweighted, it is suitable to be used in larger size; in addition, it has stable warpage, excellent high thermal conductivity and heat dissipation. 7.0 230

Diamond

Sumicrystal

スミクリスタル

Sumicrystal is a synthetic diamond single crystal with the highest thermal conductivity among all materials.
It is possible to form various metallizing thin films for chip mounting and wire bonding.

Applications Semiconductor laser submount, etc.

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Material Features Coefficient of Average Linear Thermal Expansion
R.T.~100℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Sumicrystal A heatspreader of diamond having the highest thermal conductivity among substances. 2.3 2000

CVD diamond (Chemical Vapor Deposition-Diamond)

CVDダイヤモンド

CVD diamond is polycrystalline diamond without binder, obtained by the Chemical Vapor Deposition method (CVD). It allows the forming of various metallized thin films for chip mount and wire bonding.

Applications Semiconductor laser submount, Power transistor substrate, etc.

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Material Features Coefficient of Average Linear Thermal Expansion
R.T.~100℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
CVD-Diamond This is a diamond heatspreader of 0.1 to 0.4 mm produced by the CVD method (Chemical Vapor Deposition). 2.3 >1000

Cu-Diamond (Copper-Diamond)

DMCH

DMCH is a composite material of diamond and Copper.
Although it has thermal expansion coefficient close to that of compound semiconductor material (GaAs and GaN), it has thermal conductivity higher than that of Copper. It allows the forming of various metallizing thin films for chip mounting and wire bonding.

Applications Semiconductor laser submount, power transistor substrate, etc.

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Material Trade Name Features Coefficient of Average Linear Thermal Expansion
R.T.~400℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Cu-Diamond DC60 The heatspreader with high thermal conductivity has coefficient of thermal expansion suitable for compound semiconductors (GaAs, GaN). 6.0 550
DC70 6.5 500

Ag-Diamond (Silver-Diamond)

Ag-Diamond

This is a composite material of Silver and Diamond, the thermal conductivity is 600W/(m・K) and higher than Cu-Diamond.
It is applicable to large size purpose as 50×50mm.

Applications Wireless communication, Ceramics package, Power transistor substrate, MPU, etc.

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Material Trade Name Features Coefficient of Average Linear Thermal Expansion
R.T.~800℃[ppm/K]
Thermal conductivity R.T.[W/(m・K)]
Ag-Diamond AD90 The thermal conductivity is 600W/(m・K) and higher than Cu-Diamond.
It is applicable to large size purpose as 50×50m
10.5 600